Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 13 mΩ |
|
Technical parameters/dissipated power: | 148 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Input capacitance (Ciss): | 2404pF @50V(Vds) |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 148 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Length: | 10.3 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 16 mm |
|
Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN034-100PS
|
NXP | 功能相似 | TO-220 |
NXP PSMN034-100PS 晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V
|
||
PSMN2R7-30PL
|
NXP | 功能相似 | TO-220 |
NXP PSMN2R7-30PL 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
|
||
PSMN2R7-30PL
|
Nexperia | 功能相似 | TO-220 |
NXP PSMN2R7-30PL 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
|
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