Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 29.3 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 86 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 32A
Technical parameters/Input capacitance (Ciss): 1201pF @50V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 86 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Unknown
Other/Manufacturing Applications: Power Management, Consumer Electronics, Industrial, Communications & Networking, Motor Drive & Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN015-60PS
|
NXP | 类似代替 | TO-220 |
NXP PSMN015-60PS 晶体管, MOSFET, N沟道, 50 A, 60 V, 12.6 mohm, 10 V, 3 V
|
||
PSMN016-100PS
|
Nexperia | 功能相似 | TO-220 |
N 通道 MOSFET，100V 及更高，Nexperia ### MOSFET 晶体管，NXP Semiconductors
|
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