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Model SI3948DV
Description Dual N-channel Logic Level PowerTrench MOSFET
Product QR code
Brand: Fairchild
Packaging SSOT
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.3  yuan 0.3yuan
20+:
$ 0.4023
50+:
$ 0.3725
100+:
$ 0.3576
300+:
$ 0.3457
500+:
$ 0.3367
1000+:
$ 0.3308
5000+:
$ 0.3248
10000+:
$ 0.3189
Quantity
20+
50+
100+
300+
500+
Price
$0.4023
$0.3725
$0.3576
$0.3457
$0.3367
Price $ 0.4023 $ 0.3725 $ 0.3576 $ 0.3457 $ 0.3367
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5524) Minimum order quantity(20)
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Technical parameters/drain source resistance: 95.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 960 mW

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 2.50 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SSOT

External dimensions/packaging: SSOT

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDC6561AN FDC6561AN Fairchild 功能相似 TSOT-23-6
FAIRCHILD SEMICONDUCTOR FDC6561AN 双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
PDF
FDC6561AN_NL FDC6561AN_NL Fairchild 功能相似 SuperSOT
Dual N-Channel Logic Level PowerTrench MOSFET
PDF

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