Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 2.5A
Encapsulation parameters/Encapsulation: SuperSOT
External dimensions/packaging: SuperSOT
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC6561AN
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC6561AN 双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
|
||
SI3948DV
|
Vishay Semiconductor | 功能相似 | SOT-163 |
双N沟道逻辑电平的PowerTrench MOSFET Dual N-Channel Logic Level PowerTrench MOSFET
|
||
SI3948DV
|
Fairchild | 功能相似 | SSOT |
双N沟道逻辑电平的PowerTrench MOSFET Dual N-Channel Logic Level PowerTrench MOSFET
|
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