Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 780pF @25V(Vds)
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 75000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF730
|
ST Microelectronics | 功能相似 | TO-220-3 |
5.5A , 400V , 1.000 Ohm的N通道功率MOSFET 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
||
IRF730
|
CJ | 功能相似 | TO-220-3 |
5.5A , 400V , 1.000 Ohm的N通道功率MOSFET 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
||
IRF730
|
International Rectifier | 功能相似 | TO-220 |
5.5A , 400V , 1.000 Ohm的N通道功率MOSFET 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
||
IRF730
|
Advanced Power Electronics | 功能相似 | TO-220 |
5.5A , 400V , 1.000 Ohm的N通道功率MOSFET 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
||
MTP5N40E
|
Motorola | 功能相似 |
Trans MOSFET N-CH Si 400V 5A 3Pin(3+Tab) TO-220
|
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