Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 12.0 A
Technical parameters/drain source resistance: 165 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 56.6 W
Technical parameters/input capacitance: 550 pF
Technical parameters/gate charge: 20.0 nC
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD12N10G
|
ON Semiconductor | 功能相似 | TO-252-3 |
12A,100V,N沟道MOSFET
|
||
NTD12N10T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
12A,100V功率MOSFET
|
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