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Model NTD12N10T4G

Description 12A,100VPower MOSFET

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	100 V
Technical parameters/rated current:	12.0 A
Technical parameters/drain source resistance:	165 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.76 W
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	100 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	12.0 A
Technical parameters/rise time:	30 ns
Technical parameters/Input capacitance (Ciss):	550pF @25V(Vds)
Technical parameters/rated power (Max):	1.28 W
Technical parameters/descent time:	32 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.28W (Ta), 56.6W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99