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Model NTD12N10G
Description 12A,100V,N沟道MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0.95  yuan 0.95yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9670) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

12.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

165 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.76 W

 

Technical parameters/Input capacitance:

550 pF

 

Technical parameters/gate charge:

20.0 nC

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

12.0 A

 

Technical parameters/rise time:

30 ns

 

Technical parameters/Input capacitance (Ciss):

550pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.28 W

 

Technical parameters/descent time:

32 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

1.28W (Ta), 56.6W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Co

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD12N10 NTD12N10 ON Semiconductor 功能相似 TO-252
12A,100V逻辑电平的功率MOSFET
PDF
NTD12N10T4G NTD12N10T4G ON Semiconductor 类似代替 TO-252-3
12A,100V功率MOSFET
PDF

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