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Model SUD40N08-16
Description Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
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Brand: Vishay Siliconix
Packaging TO-252
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7838) Minimum order quantity(1)
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Technical parameters/drain source resistance: 16.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100 W

Technical parameters/leakage source breakdown voltage: 80.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 40.0 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SUD40N08-16-E3 SUD40N08-16-E3 VISHAY 功能相似 TO-252-3
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
PDF
SUD40N08-16-E3 SUD40N08-16-E3 Vishay Intertechnology 功能相似 TO-252-3
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
PDF
SUD40N08-16-E3 SUD40N08-16-E3 Visay 功能相似
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
SUD40N08-16-E3 SUD40N08-16-E3 Vishay Siliconix 功能相似 TO-252-3
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
PDF
SUD40N08-16-E3 SUD40N08-16-E3 Vishay Semiconductor 功能相似 TO-252-3
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
PDF

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