Technical parameters/number of channels: | 1 |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Width: | 6.22 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK9226-75A,118
|
Nexperia | 功能相似 | TO-252-3 |
NXP BUK9226-75A,118 晶体管, MOSFET, N沟道, 45 A, 75 V, 20.9 mohm, 10 V, 1.5 V
|
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|
|
VISHAY | 功能相似 | DPAK |
Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
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||
SUD40N08-16
|
Vishay Semiconductor | 功能相似 | TO-252 |
Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
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Visay | 功能相似 |
Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
|
|||
SUD40N08-16
|
Vishay Siliconix | 功能相似 | TO-252 |
Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
|
||
SUD40N08-16
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
|
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