Technical parameters/drain source resistance: | 16.0 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 100 W |
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Technical parameters/Leakage source breakdown voltage: | 80.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 40.0 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD40N08-16-E3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
|
||
SUD40N08-16-E3
|
Vishay Intertechnology | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
|
||
SUD40N08-16-E3
|
Visay | 功能相似 |
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
|
|||
SUD40N08-16-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
|
||
SUD40N08-16-E3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 80V 40A 3Pin(2+Tab) DPAK
|
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