SUD40N08-16-E3 In Stock|PDF|Datasheet|Price|Agent[SUD40N08-16-E3 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model SUD40N08-16-E3

Description N通道80 -V （ D- S） 175℃ MOSFET N-Channel 80-V (D-S) 175C MOSFET

Brand: VISHAY

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.013 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	3 W
Technical parameters/threshold voltage:	2 V
Technical parameters/drain source voltage (Vds):	80 V
Technical parameters/Leakage source breakdown voltage:	80.0 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	40.0 A
Technical parameters/rise time:	52 ns
Technical parameters/Input capacitance (Ciss):	1960pF @25V(Vds)
Technical parameters/rated power (Max):	3 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2000
Other/Manufacturing Applications:	Industrial, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
BUK9226-75A,118	Nexperia	功能相似	TO-252-3	NXP BUK9226-75A,118 晶体管, MOSFET, N沟道, 45 A, 75 V, 20.9 mohm, 10 V, 1.5 V	PDF
SUD40N08-16	VISHAY	功能相似	DPAK	Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
SUD40N08-16	Vishay Semiconductor	功能相似	TO-252	Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
SUD40N08-16	Visay	功能相似		Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
SUD40N08-16	Vishay Siliconix	功能相似	TO-252	Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN	PDF
SUD40N08-16	Vishay Intertechnology	功能相似		Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN	PDF