Technical parameters/drain source resistance: 18.0 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): -9.00 A to 9.00 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4501ADY-T1-E3
|
VISHAY | 功能相似 | SOIC |
MOSFET N/P-CH 30V/8V 8SOIC
|
||
SI4501ADY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET N/P-CH 30V/8V 8SOIC
|
||
SI4501ADY-T1-GE3
|
VISHAY | 功能相似 | SOIC |
MOSFET N/P-CH 30V/8V 8-SOIC
|
||
SI4501DY
|
Visay | 完全替代 |
Complementary MOSFET Half-Bridge (N- and P-Channel)
|
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