Technical parameters/drain source resistance: 0.027.0.06 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/drain source voltage (Vds): 30V, 8V
Technical parameters/Continuous drain current (Ids): 6.30 A
Technical parameters/rated power (Max): 1.3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4501ADY-T1-GE3
|
VISHAY | 类似代替 | SOIC |
MOSFET N/P-CH 30V/8V 8-SOIC
|
||
SI4501DY
|
Visay | 功能相似 |
Complementary MOSFET Half-Bridge (N- and P-Channel)
|
|||
SI4501DY-T1-E3
|
Vishay Intertechnology | 功能相似 |
MOSFET 30/8 9/6.2A
|
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