Technical parameters/polarity: | N+P |
|
Technical parameters/drain source voltage (Vds): | 30V, 8V |
|
Technical parameters/Continuous drain current (Ids): | 6.3A/4.1A |
|
Technical parameters/rated power (Max): | 1.3 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC |
|
Dimensions/Packaging: | SOIC |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4501ADY-T1-GE3
|
VISHAY | 类似代替 | SOIC |
MOSFET N/P-CH 30V/8V 8-SOIC
|
||
SI4501DY
|
Visay | 功能相似 |
Complementary MOSFET Half-Bridge (N- and P-Channel)
|
|||
SI4501DY-T1-E3
|
Vishay Intertechnology | 功能相似 |
MOSFET 30/8 9/6.2A
|
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