Technical parameters/drain source resistance: 80.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.56 W
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.85 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4410BDY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4410BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4418DY-T1-E3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 200V 2.3A 8-SOIC
|
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