Technical parameters/drain source resistance: 8.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): -13.0 A to 13.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Visay | 完全替代 |
Mosfet 30V 13A 2.5W
|
|||
SI4880DY
|
Vishay Siliconix | 完全替代 | SO |
Mosfet 30V 13A 2.5W
|
||
SI4880DY-T1-E3
|
Vishay Intertechnology | 功能相似 | SOIC |
MOSFET N-CH 30V 13A 8-SOIC
|
||
SI4880DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 13A 8-SOIC
|
||
SI4880DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 13A 8-SOIC
|
||
SI4880DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET N-CH 30V 13A 8-SOIC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review