Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single Quad Drain Triple Source
Other/Case/Package: SOIC N
Other/Soft 랜イ동터극동: N-Channel
Other/ハ레イ?동항복압: 30 V
Other/Link Files 레イ류: 13 A
Other/력발산: 2500 mW
Other/저항 Drain Source RDS (on): 0.0085 Ohm @ 10 V
Other/Typical 하강: 30 ns
Other/Typical 상승: 9 ns
Other/표준오프い Contact Us: 46 ns
Other/ị동: REEL
Other/게イSoft - ?동항복압: 25 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Visay | 功能相似 |
Mosfet 30V 13A 2.5W
|
|||
SI4880DY
|
Vishay Siliconix | 功能相似 | SO |
Mosfet 30V 13A 2.5W
|
||
SI4880DY-T1
|
Vishay Siliconix | 功能相似 | SO |
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
|
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