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Model SI4880DY-T1-E3
Description Trans MOSFET N-CH 30V 13A 8Pin SOIC N T/R
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Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5970) Minimum order quantity(1)
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Technical parameters/drain source resistance: 8.50 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.50 W

Technical parameters/breakdown voltage of gate source: ±25.0 V

Technical parameters/Continuous drain current (Ids): -13.0 A to 13.0 A

Technical parameters/rise time: 9 ns

Technical parameters/descent time: 30 ns

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4880DY SI4880DY Visay 功能相似
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SI4880DY-T1 SI4880DY-T1 Vishay Siliconix 功能相似 SO
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
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