Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 5570pF @25V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 520000 mW
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227
External dimensions/packaging: SOT-227
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN180N20
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN180N20. 晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V
|
||
IXFN55N50
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN55N50 晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
|
||
IXFN55N50
|
Littelfuse | 功能相似 |
IXYS SEMICONDUCTOR IXFN55N50 晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
|
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