Technical parameters/rated voltage (DC): | 200 V |
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Technical parameters/rated current: | 180 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.01 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 700 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/Continuous drain current (Ids): | 180 A |
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Technical parameters/rise time: | 85 ns |
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Technical parameters/isolation voltage: | 2.5 kV |
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Technical parameters/Input capacitance (Ciss): | 22000pF @25V(Vds) |
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Technical parameters/rated power (Max): | 700 W |
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Technical parameters/descent time: | 56 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 700W (Tc) |
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Encapsulation parameters/installation method: | Screw |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-227-4 |
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Dimensions/Packaging: | SOT-227-4 |
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Physical parameters/materials: | Silicon |
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Physical parameters/weight: | 0.046 kg |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Power Management, Lighting, Lighting, power management |
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Compliant with standards/RoHS standards: |
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN55N50
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN55N50 晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
|
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IXFN55N50
|
Littelfuse | 类似代替 |
IXYS SEMICONDUCTOR IXFN55N50 晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
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