Technical parameters/rated power: 600 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.08 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 600 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 55.0 A
Technical parameters/rise time: 60 ns
Technical parameters/isolation voltage: 2.50 kV
Technical parameters/Input capacitance (Ciss): 9400pF @25V(Vds)
Technical parameters/rated power (Max): 625 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625W (Tc)
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Physical parameters/materials: Silicon
Physical parameters/weight: 46.0 g
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Lighting, Power Management, Lighting
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN180N20
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN180N20. 晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V
|
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