Technical parameters/power supply voltage (DC): 5.00 V, 5.25 V (max)
Technical parameters/load capacitance: 5.00 pF
Technical parameters/clock frequency: 120 GHz
Technical parameters/access time: 120 ns
Technical parameters/memory capacity: 125000 B
Technical parameters/power supply voltage: 4.75V ~ 5.25V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: DIP-32
External dimensions/packaging: DIP-32
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1245AB-120IND+
|
Maxim Integrated | 完全替代 | DIP-32 |
IC NVSRAM 1Mbit 120NS 32EDIP
|
||
DS1245AB-70+
|
Dallas Semiconductor | 类似代替 | DIP |
MAXIM INTEGRATED PRODUCTS DS1245AB-70+ 芯片, 存储器, NVRAM
|
||
|
|
Maxim Integrated | 类似代替 | DIP-32 |
MAXIM INTEGRATED PRODUCTS DS1245AB-70+ 芯片, 存储器, NVRAM
|
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