Technical parameters/access time: | 120 ns |
|
Technical parameters/power supply voltage: | 4.75V ~ 5.25V |
|
Technical parameters/power supply voltage (Max): | 5.25 V |
|
Technical parameters/power supply voltage (Min): | 4.75 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DIP-32 |
|
Dimensions/Width: | 18.8 mm |
|
Dimensions/Packaging: | DIP-32 |
|
Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 完全替代 | DIP-32 |
IC NVSRAM 1Mbit 120NS 32DIP
|
||
|
|
Maxim Integrated | 类似代替 | EDIP-32 |
IC NVSRAM 1Mbit 120NS 32DIP
|
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