Technical parameters/power supply voltage: 4.75V ~ 5.25V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: EDIP-32
External dimensions/packaging: EDIP-32
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1245AB-120IND+
|
Maxim Integrated | 类似代替 | DIP-32 |
IC NVSRAM 1Mbit 120NS 32EDIP
|
||
|
|
Dallas Semiconductor | 类似代替 | DIP |
RAM,Maxim Integrated ### SRAM(静态随机存取存储器)
|
||
DS1245AB-70IND+
|
Maxim Integrated | 类似代替 | DIP-32 |
RAM,Maxim Integrated ### SRAM(静态随机存取存储器)
|
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