Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 40.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 110 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 460 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/rise time: 440 ns
Technical parameters/Input capacitance (Ciss): 7500pF @25V(Vds)
Technical parameters/rated power (Max): 460 W
Technical parameters/descent time: 250 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 460W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/length: 20.2 mm
External dimensions/width: 5 mm
External dimensions/height: 26.4 mm
External dimensions/packaging: TO-264-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD18N55M5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
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||
STD6N95K5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
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STW20NK50Z
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ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
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