Technical parameters/dissipated power: 3000 mW
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 24
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LMD18200-2D-QV
|
National Semiconductor | 功能相似 | DIP |
3A , 55V H桥 3A, 55V H-Bridge
|
||
|
|
National | 类似代替 |
2.4A,55V H 桥 24-CDIP SB -55 to 125
|
|||
LMD18200-2D/883
|
TI | 类似代替 | DIP |
2.4A,55V H 桥 24-CDIP SB -55 to 125
|
||
LMD18200-2D/883
|
National Semiconductor | 类似代替 | PDIP |
2.4A,55V H 桥 24-CDIP SB -55 to 125
|
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