Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 75.0 A
Technical parameters/dissipated power: 370 W
Technical parameters/input capacitance: 6.12 nF
Technical parameters/gate charge: 300 nC
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 5100pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 370000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75652G3
|
Fairchild | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HUF75652G3.. 场效应管, MOSFET, N沟道, 100V, 75A, TO-247
|
||
HUF75652G3
|
ON Semiconductor | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HUF75652G3.. 场效应管, MOSFET, N沟道, 100V, 75A, TO-247
|
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