Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0067 Ω
Technical parameters/dissipated power: 515 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 195 ns
Technical parameters/Input capacitance (Ciss): 7585pF @25V(Vds)
Technical parameters/rated power (Max): 515 W
Technical parameters/descent time: 190 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 515 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 4.82 mm
External dimensions/height: 20.82 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75652G3
|
Fairchild | 功能相似 | TO-247-3 |
75A ， 100V ， 0.008 Ohm的N通道UltraFET功率MOSFET 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
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||
HUF75652G3
|
ON Semiconductor | 功能相似 | TO-247-3 |
75A ， 100V ， 0.008 Ohm的N通道UltraFET功率MOSFET 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
|
||
STW120NF10
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW120NF10 晶体管, MOSFET, N沟道, 60 A, 100 V, 9 mohm, 10 V, 4 V
|
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