Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 3 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5-3
External dimensions/packaging: TO-5-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1893
|
CDIL | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
|||
2N1893
|
ST Microelectronics | 完全替代 | TO-5-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
2N1893
|
Motorola | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
|||
|
|
Microchip | 完全替代 | TO-5-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
|
|
New Jersey Semiconductor | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
|||
2N1893
|
Central Semiconductor | 完全替代 | TO-39-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
2N1893
|
Microsemi | 完全替代 | TO-5-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
2N1893
|
Rochester | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
|||
JANTX2N1893S
|
Microsemi | 完全替代 | TO-205 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
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