Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 3 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1893S
|
Microsemi | 完全替代 | TO-5-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
MPS8098
|
Fairchild | 功能相似 | TO-226-3 |
0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.5A Ic, 100 - 300 hF
|
||
MPS8098
|
Continental Device | 功能相似 |
0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.5A Ic, 100 - 300 hF
|
|||
MPS8098
|
ON Semiconductor | 功能相似 | TO-226-3 |
0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.5A Ic, 100 - 300 hF
|
||
MPS8098
|
Central Semiconductor | 功能相似 | TO-92 |
0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.5A Ic, 100 - 300 hF
|
||
MPS8098
|
Motorola | 功能相似 |
0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.5A Ic, 100 - 300 hF
|
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