Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 900mV @10mA
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 22 V
Technical parameters/forward voltage (Max): 900mV @10mA
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-80
External dimensions/packaging: SOD-80
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-C22
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NXP | 类似代替 | SOD-80 |
齐纳二极管 500mW,BZV55 系列,Nexperia NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,Nexperia
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Fagor Electronica | 类似代替 | Mini-MELF |
齐纳二极管 500mW,BZV55 系列,Nexperia NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,Nexperia
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Philips | 类似代替 | Mini-MELF |
齐纳二极管 500mW,BZV55 系列,Nexperia NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,Nexperia
|
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BZV55-C22
|
Philips | 类似代替 | Mini-MELF |
齐纳二极管 500mW,BZV55 系列,Nexperia NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,Nexperia
|
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BZV55-C22,115
|
NXP | 功能相似 | Mini-MELF |
NXP BZV55-C22,115 单管二极管 齐纳, 22 V, 400 mW, SOD-80C, 5 %, 2 引脚, 200 °C
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BZV55-C22,115
|
Nexperia | 功能相似 | SOD-80 |
NXP BZV55-C22,115 单管二极管 齐纳, 22 V, 400 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
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TZMC22-GS08
|
Vishay Semiconductor | 功能相似 | SOD-80 |
齐纳二极管 500mW,TZM 系列,Vishay Semiconductor Vishay 的表面安装 (SMT) 齐纳二极管额定值为 500mW,击穿电压范围从 3.3 至 75V ### 齐纳二极管,Vishay Semiconductor
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