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Model IRLR024NTRRPBF
Description MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Product QR code
Brand: International Rectifier
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.52  yuan 2.52yuan
5+:
$ 3.3993
25+:
$ 3.1475
50+:
$ 2.9712
100+:
$ 2.8957
500+:
$ 2.8453
2500+:
$ 2.7824
5000+:
$ 2.7572
10000+:
$ 2.7194
Quantity
5+
25+
50+
100+
500+
Price
$3.3993
$3.1475
$2.9712
$2.8957
$2.8453
Price $ 3.3993 $ 3.1475 $ 2.9712 $ 2.8957 $ 2.8453
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5879) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.11 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 45 W

Technical parameters/product series: IRLR024N

Technical parameters/input capacitance: 480pF @25V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/leakage source breakdown voltage: 55 V

Technical parameters/Continuous drain current (Ids): 17.0 A

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AUIRLR024N AUIRLR024N Infineon 类似代替 TO-252-3
INFINEON AUIRLR024N 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 1 V
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IRLR024NPBF IRLR024NPBF IRF 类似代替
N 通道功率 MOSFET 13A 至 19A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
PDF
IRLR024NPBF IRLR024NPBF Infineon 类似代替 TO-252-3
N 通道功率 MOSFET 13A 至 19A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
PDF
IRLR024NTRPBF IRLR024NTRPBF International Rectifier 类似代替 TO-252-3
INFINEON IRLR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V
PDF
IRLR024NTRPBF IRLR024NTRPBF Infineon 类似代替 TO-252-3
INFINEON IRLR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V
PDF
STD12NF06LT4 STD12NF06LT4 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD12NF06LT4 晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
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