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Model IRLR024NPBF
Description N Channel power MOSFETs 13A to 19A, Infineon's discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0.52  yuan 0.52yuan
10+:
$ 0.7061
50+:
$ 0.6694
100+:
$ 0.6433
300+:
$ 0.6276
500+:
$ 0.6119
1000+:
$ 0.5962
2500+:
$ 0.5727
5000+:
$ 0.5675
Quantity
10+
50+
100+
300+
500+
Price
$0.7061
$0.6694
$0.6433
$0.6276
$0.6119
Price $ 0.7061 $ 0.6694 $ 0.6433 $ 0.6276 $ 0.6119
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8877) Minimum order quantity(10)
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Technical parameters/rated power: 38 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.065 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 45 W

Technical parameters/threshold voltage: 2 V

Technical parameters/input capacitance: 480pF @25V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/leakage source breakdown voltage: 55 V

Technical parameters/Continuous drain current (Ids): 17A

Technical parameters/rise time: 74 ns

Technical parameters/Input capacitance (Ciss): 480pF @25V(Vds)

Technical parameters/rated power (Max): 45 W

Technical parameters/descent time: 29 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 45W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Power Management, power management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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IRLR024NTRPBF IRLR024NTRPBF Infineon 类似代替 TO-252-3
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