Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 12.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.08 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 350 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 30 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 42.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, computer and computer peripherals, power management, communication and networking, power management, automotive, Industrial, Automotive, Communications & Networking, Computers & Computer Peripherals
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD3055L104T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR NTD3055L104T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
|
||
STD12NF06T4
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD12NF06T4 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.08 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review