Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 14.0 A
Technical parameters/drain source resistance: 400 mΩ (max)
Technical parameters/input capacitance: 2.04 nF
Technical parameters/gate charge: 64.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500V (min)
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/rise time: 36.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
International Rectifier | 功能相似 |
MOSFET N-CH 500V 14A TO-247AC
|
|||
IRFP450A
|
Freescale | 功能相似 |
MOSFET N-CH 500V 14A TO-247AC
|
|||
IRFP450A
|
VISHAY | 功能相似 | TO-247-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450A
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 500V 14A TO-247AC
|
|||
IRFP450A
|
Vishay Siliconix | 功能相似 | TO-247-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450APBF
|
International Rectifier | 完全替代 | TO-247 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450APBF
|
Vishay Precision Group | 完全替代 | TO-247 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450APBF
|
Vishay Semiconductor | 完全替代 | TO-247 |
MOSFET N-CH 500V 14A TO-247AC
|
||
IRFP450APBF
|
VISHAY | 完全替代 | TO-247-3 |
MOSFET N-CH 500V 14A TO-247AC
|
||
|
|
ETC | 功能相似 |
STMICROELECTRONICS STW14NK50Z 晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
|
|||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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