Technical parameters/rated voltage (DC): | 500 V |
|
Technical parameters/rated current: | 14.0 A |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 190 W |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/Continuous drain current (Ids): | 14.0 A |
|
Encapsulation parameters/Encapsulation: | TO-247 |
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Dimensions/Packaging: | TO-247 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP460APBF
|
Infineon | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
Vishay Siliconix | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
Vishay Semiconductor | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
International Rectifier | 类似代替 | TO-247 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
LiteOn | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
VISHAY | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
|
|
ETC | 功能相似 |
STMICROELECTRONICS STW14NK50Z 晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
|
|||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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