Technical parameters/drain source resistance: 0.4 Ω
Technical parameters/dissipated power: 190 W
Technical parameters/input capacitance: 2038pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP460APBF
|
Infineon | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
Vishay Siliconix | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
Vishay Semiconductor | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
International Rectifier | 类似代替 | TO-247 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
LiteOn | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
IRFP460APBF
|
VISHAY | 类似代替 | TO-247-3 |
VISHAY IRFP460APBF 晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
|
||
|
|
ETC | 功能相似 |
STMICROELECTRONICS STW14NK50Z 晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
|
|||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review