Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.3A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7807A
|
Infineon | 类似代替 | SO-8 |
SOIC N-CH 30V 8.3A
|
||
|
|
Infineon | 类似代替 | SOIC |
SOIC N-CH 30V 8.3A
|
||
IRF7807PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7807PBF 晶体管, MOSFET, N沟道, 8.3 A, 30 V, 25 mohm, 4.5 V, 1 V
|
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