Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 6.60 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta)
Technical parameters/product series: IRF7807A
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 8.30 A
Technical parameters/rise time: 17.0 ns
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7807
|
IRF | 类似代替 |
SOIC N-CH 30V 8.3A
|
|||
IRF7807PBF-1
|
Infineon | 类似代替 | SO-8 |
SOIC N-CH 30V 8.3A
|
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