Technical parameters/rated power: 2.5 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.025 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.3A
Technical parameters/rise time: 17 ns
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 2.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7807PBF-1
|
Infineon | 类似代替 | SO-8 |
SOIC N-CH 30V 8.3A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review