Technical parameters/rated power: 2.5 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.24 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 1280 pF
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 2.2A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1280pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6216
|
Infineon | 类似代替 | SOIC-8 |
SOIC P-CH 150V 2.2A
|
||
IRF6216TR
|
Infineon | 类似代替 | SOIC |
SOIC P-CH 150V 2.2A
|
||
IRF6216TR
|
International Rectifier | 类似代替 | SOIC |
SOIC P-CH 150V 2.2A
|
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