Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF6216
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF621
|
Harris | 功能相似 | TO-220-3 |
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
||
IRF621
|
TT Electronics Resistors | 功能相似 |
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
|||
IRF6216TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF6216TRPBF 晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
|
||
IRF6216TRPBF
|
IFA | 类似代替 |
INFINEON IRF6216TRPBF 晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review