Chip AI consultant
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/drain source voltage (Vds): | 150 V |
|
Technical parameters/Continuous drain current (Ids): | 2.2A |
|
Technical parameters/rise time: | 15 ns |
|
Technical parameters/Input capacitance (Ciss): | 1280pF @25V(Vds) |
|
Technical parameters/descent time: | 26 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Other/Product Lifecycle: | Not Recommended for New Designs |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF621
|
Harris | 功能相似 | TO-220-3 |
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
||
|
IRF621
|
TT Electronics Resistors | 功能相似 |
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
|||
IRF6216TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF6216TRPBF 晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
|
||
IRF6216TRPBF
|
IFA | 类似代替 |
INFINEON IRF6216TRPBF 晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review