Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 2A
Technical parameters/rise time: 25 ns
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7103TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7103TRPBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
|
||
NDS9955
|
Fairchild | 类似代替 | SO-8 |
双N沟道增强型场效应晶体管 Dual N-Channel Enhancement Mode Field Effect Transistor
|
||
|
|
ON Semiconductor | 类似代替 | SOIC-8 |
双N沟道增强型场效应晶体管 Dual N-Channel Enhancement Mode Field Effect Transistor
|
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