Chip AI consultant
Technical parameters/drain source voltage (Vds): | 50 V |
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Technical parameters/Input capacitance (Ciss): | 345pF @25V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7103TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7103TRPBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
|
||
MMDF1N05ER2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
ON SEMICONDUCTOR MMDF1N05ER2G 双路场效应管, MOSFET, 双N沟道, 2 A, 50 V, 0.3 ohm, 10 V, 3 V
|
||
RF1K49154
|
Fairchild | 类似代替 | SO-8 |
2A ， 60V ， 0.130欧姆，双N沟道， LittleFET⑩功率MOSFET 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
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