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Model NDS9955

Description Dual N-channel Enhancement Mode Field Effect Transistor

Brand: Fairchild

Packaging SO-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

20+:

$ 0.0000

50+:

$ 0.0000

100+:

$ 0.0000

300+:

$ 0.0000

500+:

$ 0.0000

1000+:

$ 0.0000

5000+:

$ 0.0000

10000+:

$ 0.0000

Price	$ 0.0000	$ 0.0000	$ 0.0000	$ 0.0000	$ 0.0000
Start batch production	20+	50+	100+	300+	500+

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Technical parameters/rated voltage (DC):	50.0 V
Technical parameters/rated current:	3.00 A
Technical parameters/number of channels:	2
Technical parameters/drain source resistance:	130 mΩ
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	2 W
Technical parameters/Input capacitance:	345 pF
Technical parameters/gate charge:	30.0 nC
Technical parameters/drain source voltage (Vds):	50 V
Technical parameters/Leakage source breakdown voltage:	50 V
Technical parameters/Continuous drain current (Ids):	3.00 A
Technical parameters/rise time:	7.5 ns
Technical parameters/Input capacitance (Ciss):	345pF @25V(Vds)
Technical parameters/rated power (Max):	900 mW
Technical parameters/descent time:	7 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Encapsulation parameters/installation method:	Surface Mount
Encapsulation parameters/Encapsulation:	SO-8
Dimensions/Length:	4.9 mm
Dimensions/Width:	3.9 mm
Dimensions/Height:	1.75 mm
Dimensions/Packaging:	SO-8
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Contains Lead

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