Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/Input capacitance (Ciss): 21pF @5V(Vds)
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Chenmko | 功能相似 | SOT-323 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
VISHAY | 功能相似 | SOT-23-3 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
Ledil | 功能相似 |
Small Signal Field-Effect Transistor,
|
|||
2N7002E
|
Philips | 功能相似 | SOT-23 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
NXP | 功能相似 | SOT-23 |
Small Signal Field-Effect Transistor,
|
||
2N7002E
|
Panasonic | 功能相似 | SOT-23-3 |
Small Signal Field-Effect Transistor,
|
||
2N7002E-T1-E3
|
VISHAY | 完全替代 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Semiconductor | 完全替代 | TO-236 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Intertechnology | 完全替代 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
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