Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 40.0 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750
Technical parameters/Maximum current amplification factor (hFE): 15000
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-225-3
External dimensions/packaging: TO-225-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6039
|
ST Microelectronics | 功能相似 | TO-126-3 |
t-Npn Si-Darlington Amp
|
||
|
|
NTE Electronics | 功能相似 |
t-Npn Si-Darlington Amp
|
|||
|
|
Motorola | 功能相似 |
t-Npn Si-Darlington Amp
|
|||
2N6039
|
ON Semiconductor | 功能相似 | TO-225-3 |
t-Npn Si-Darlington Amp
|
||
|
|
Continental Device | 功能相似 |
t-Npn Si-Darlington Amp
|
|||
2N6039G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR 2N6039G 达林顿双极晶体管
|
||
BD679A
|
ON Semiconductor | 类似代替 | TO-225-3 |
STMICROELECTRONICS BD679A 单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
|
||
BD679A
|
Central Semiconductor | 类似代替 | SIP |
STMICROELECTRONICS BD679A 单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review