Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-225-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-225-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD679A
|
ON Semiconductor | 功能相似 | TO-225-3 |
STMICROELECTRONICS BD679A 单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
|
||
BD679A
|
Central Semiconductor | 功能相似 | SIP |
STMICROELECTRONICS BD679A 单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
|
||
BD679AG
|
ON Semiconductor | 功能相似 | TO-126-3 |
NPN 复合晶体管，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
|
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